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| PD-91866B IRF7663 HEXFET(R) Power MOSFET q q q q q q Trench Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel S 1 8 7 A D D D D S S G 2 VDSS = -20V 3 6 4 5 RDS(on) = 0.020 T op V ie w Description New trench HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8TM package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal package for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. MICRO8TM Absolute Maximum Ratings Parameter VDS ID @ T A = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -8.2 -6.6 -66 1.8 1.15 10 115 12 -55 to + 150 Units V A W mW/C mJ V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 70 Units C/W www.irf.com 1 5 /25/00 IRF7663 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 --- --- --- -0.60 14.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.01 --- --- --- --- --- --- --- --- 30 5.0 7.0 11 100 125 172 2520 615 375 Max. Units Conditions --- V VGS = 0V, ID = -250uA --- V/C Reference to 25C, ID = -1mA 0.020 VGS = -4.5V, ID = -7.0A 0.040 VGS = -2.5V, ID = -5.1A -1.2 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -7.0A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 70C -100 VGS = -12V nA 100 VGS = 12V 45 ID = -6.0A 7.5 nC VDS = -10V 10.5 VGS = -5.0V --- VDD = -10V --- ID = -6.0A ns --- RG = 6.2 --- RD = 1.64 --- VGS = 0V --- pF V DS = -10V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 70 50 -1.8 A -66 -1.2 105 75 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -7.0A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board, t<10 sec Starting TJ = 25C, L = 17.8mH RG = 25, IAS = -3.6A. (See Figure 10) Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF7663 100 VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP 100 -I D , Drain-to-Source Current (A) -2.25V 10 -I D , Drain-to-Source Current (A) VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP -2.25V 10 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 TJ = 25 C TJ = 150 C R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -8.2A -I D , Drain-to-Source Current (A) 1.5 1.0 0.5 10 2.0 V DS = -15V 20s PULSE WIDTH 2.5 3.0 3.5 4.0 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7663 4000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds 10 ID = -6.0A VDS = -10V -VGS, Gate-to-Source Voltage (V) 8 3000 C, Capacitance(pF) Ciss 2000 6 4 1000 Coss Crss 2 0 1 10 100 0 0 10 20 FOR TEST CIRCUIT SEE FIGURE 13 30 40 50 -VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) -ISD , Reverse Drain Current (A) -ID , Drain Current (A) I TJ = 25 C 100 10us 10 TJ = 150 C 100us 10 1ms 1 0.5 V GS = 0 V 1.0 1.5 2.0 2.5 1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7663 9.0 300 EAS , Single Pulse Avalanche Energy (mJ) 7.5 240 ID -1.6A -2.9A BOTTOM -3.6A TOP -ID , Drain Current (A) 6.0 180 4.5 120 3.0 1.5 60 0.0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC , Case Temperature ( C) Starting TJ , Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 100 Thermal Response (Z thJC ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.1 1 10 100 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7663 Package Outline Micro8TM TM Dimensions are shown in millimeters (inches) L E A D A S S IG N M E N T S D -B3 DDDD 8765 3 E -A1234 SSSG S1 G 1 S2 G 2 8765 H 0 .2 5 (.0 1 0 ) M A M S IN G L E 1234 DUAL 1234 D1 D1 D2 D2 8765 D IM A A1 B C D e e1 E H L IN C H E S M IN .0 3 6 .0 0 4 .0 1 0 .0 0 5 .1 1 6 M AX .0 4 4 .0 0 8 .0 1 4 .0 0 7 .1 2 0 M IL L IM E T E R S M IN 0 .9 1 0 .1 0 0 .2 5 0 .1 3 2 .9 5 MAX 1 .1 1 0 .2 0 0 .3 6 0.18 3.05 .0 2 5 6 B A S IC .0 1 2 8 B A S IC .1 1 6 .1 8 8 .0 1 6 0 .1 2 0 .1 9 8 .0 2 6 6 0 .6 5 B A S IC 0 .3 3 B A S IC 2 .9 5 4 .7 8 0 .4 1 0 3 .0 5 5 .0 3 0 .6 6 6 e 6X e1 A -CB 8X 0 .0 8 (.0 0 3 ) M A1 C AS B S 0 .1 0 (.0 0 4 ) L 8X C 8X R E C O M M E N D E D F O O T P R IN T 1 .0 4 ( .0 4 1 ) 8X 0 .3 8 8X ( .0 1 5 ) 3 .2 0 ( .1 2 6 ) 4 .2 4 5 .2 8 ( .1 6 7 ) ( .2 0 8 ) N O TE S : 1 D IM E N S IO N IN G A N D TO L E R A N C IN G P E R A N S I Y 14 .5M -1 982 . 2 C O N TR O LL IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S D O N O T IN C LU D E M O LD F L AS H . 0 .6 5 6 X ( .02 5 6 ) Part Marking Information Micro8TM TM D A T E C O D E (YW W ) A Y = LA ST D IG IT O F YEA R W W = W EE K EX AM PLE : T H IS IS A N IR F 7501 45 1 75 01 P AR T N U M B ER TOP 6 www.irf.com IRF7663 Tape & Reel Information Micro8TM TM Dimensions are shown in millimeters (inches) T E R M IN A L N U M B E R 1 1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C T IO N N OTES: 1 . O U TL IN E C O N F O R M S TO E IA -4 81 & E IA -54 1. 2 . C O N TR O LL IN G D IM E N SIO N : M IL LIM E TE R. 3 3 0 .0 0 (1 2 .9 9 2 ) MAX. 1 4 .4 0 ( .5 6 6 ) 1 2 .4 0 ( .4 8 8 ) NO TES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 5/00 www.irf.com 7 |
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